Samsung 2GB DDR3 SO-DIMM 204pin PC3-12800S 1600MHz Memory Module

Overview

The Samsung M471B5773CHS-CK0 is a 2GB DDR3 SO-DIMM memory module designed for notebooks and compact desktop systems. Operating at 1600 MHz with a 204-pin interface, it meets the PC3-12800S standard and runs at the typical 1.5 volts required by most DDR3 laptops. This module provides a straightforward way to boost system responsiveness by increasing physical memory, reducing reliance on slower storage paging during everyday tasks.

Key features

• 2GB capacity that improves multitasking and overall system performance
• DDR3 memory built to the PC3-12800S specification for reliable compatibility
• 1600 MHz data rate delivers higher bandwidth compared to older 1066 or 1333 MHz modules
• 204-pin SO-DIMM format designed to fit standard laptop and compact desktop memory slots
• Operates at 1.5 volts, the industry standard for broad compatibility with DDR3 systems
• Easy installation process requiring no BIOS adjustments, recognized automatically on boot
• Manufactured by Samsung, ensuring stability and longevity backed by extensive memory expertise

Key specs

• Memory type: DDR3
• Capacity: 2 GB
• Speed: 1600 MHz (PC3-12800S)
• Form factor: 204-pin SO-DIMM
• Voltage: 1.5 V

Installation and setup

Installing this memory module is simple and user-friendly. After powering down and unplugging your device, open the memory access panel, insert the module at a slight angle into the slot, and press down until the clips secure it. The system will detect the new memory automatically during the next startup, eliminating the need for manual configuration or BIOS changes.

Ideal uses and environments

This memory upgrade is well suited for students extending the life of their study laptops, professionals relying on trusted portable machines, and hobbyists building small form factor PCs that still use DDR3 memory. It enhances performance in everyday activities such as web browsing with multiple tabs, document editing, video streaming, and light photo editing by reducing slow storage paging.